首页> 外国专利> Vertical structured optical modulator using dual wavelength DBR

Vertical structured optical modulator using dual wavelength DBR

机译:使用双波长DBR的垂直结构光调制器

摘要

The present invention relates to an optical device capable of integrating two different wavelength devices to play a role of logic, switching, wavelength conversion, etc., and is transparent to the substrate 1 on a semiconductor substrate 1 doped with a first conductivity type. An optical device operating at a wavelength having a first optical device structure in which the first conductive electrode 2, the multi-quantum well structure layer 3 of the optically active layer, and the second conductive electrode 4 are sequentially formed. And a mirror structure (5) having a high reflectance at the same time on the first optical element structure and the second wavelength cut out on the first optical element structure, and on the mirror structure (5) A second optical element structure in which the second conductive electrode 6 operating at the second wavelength, the multi-quantum well structure layer 7 of the optically active layer, and the second conductive semiconductor electrode layer 8 are sequentially formed; The first conductive base 1 and the second conductive electrode 6 An ohmic electrode 9, an ohmic electrode 10 for the second conductive electrode 4 and a second conductive semiconductor electrode layer 8, an antireflection film 11 for the second optical element structure, An anti-reflective film 12 for the first optical element structure is provided and has a vertical structure type using a dual wavelength DBR composed of a metal connecting the second conductive electrode 4 and the second conductive electrode 6. It relates to an optical modulator.
机译:光学装置技术领域本发明涉及一种光学装置,该光学装置能够集成两个不同的波长装置以起到逻辑,切换,波长转换等的作用,并且对于掺杂有第一导电类型的半导体基板1上的基板1是透明的。以具有第一光学装置结构的波长工作的光学装置,其中第一导电电极2,光学活性层的多量子阱结构层3和第二导电电极4依次形成。并且在第一光学元件结构上同时具有高反射率的第二反射镜结构(5)和在第一光学元件结构上切出的第二波长,以及在反射镜结构(5)上的第二光学元件结构具有高反射率。依次形成以第二波长工作的第二导电电极6,光学活性层的多量子阱结构层7和第二导电半导体电极层8。第一导电基体1和第二导电电极6:欧姆电极9,用于第二导电电极4的欧姆电极10和第二导电半导体电极层8,用于第二光学元件结构的抗反射膜11,抗反射膜提供用于第一光学元件结构的膜12,并具有使用由连接第二导电电极4和第二导电电极6的金属构成的双波长DBR的垂直结构型。本发明涉及光学调制器。

著录项

  • 公开/公告号KR970048681A

    专利类型

  • 公开/公告日1997-07-29

    原文格式PDF

  • 申请/专利权人 양승택;

    申请/专利号KR19950052644

  • 发明设计人 현경숙;권오균;김광준;이일항;

    申请日1995-12-20

  • 分类号G02B26/00;

  • 国家 KR

  • 入库时间 2022-08-22 03:16:51

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