Method of forming three-layer photoresist pattern using far ultraviolet rays

摘要

The present invention relates to a method for forming a three-layer photoresist film pattern using far ultraviolet rays. In forming a three-layer photoresist film pattern using short-wavelength ultraviolet rays, a process of performing oxygen plasma treatment immediately after the formation of a PEOXIDE layer used as an intermediate layer is performed. By additional insertion, when the photoresist pattern is formed on the low density layer such as PEOXIDE layer in TLR process using short-wavelength far ultraviolet rays, it is possible to solve the problem that the pattern CD is severely changed due to irregular light reflection and the profile is bad. In addition, it is possible to implement a uniform line width of the fine pattern.