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Solution growth method CdTe / CdS solar cell fabrication method using CdS thin film

机译:溶液生长法CdTe / CdS太阳能电池的CdS薄膜制造方法

摘要

The present invention relates to a method of manufacturing a CdS thin film on a transparent conductive glass substrate made of ITO (In 2 O 3 .SnO 2 ) or SnO 2 : F by a solution growth method under specific conditions. The CdS thin film is annealed and then subjected to electron beam (EB) A CdTe thin film is formed on a CdS thin film by a method such as evaporation, sputtering or the like. Then, the CdTe thin film is thermally treated, chemically etched with a 2 to 20% chromic acid solution, and the oxide film is removed with hydrazine hydrate, Au or Cu / Au is deposited and then heat-treated. The present invention relates to a method of manufacturing a CdTe / CdS solar cell using a CdS thin film. The CdS thin film exhibits energy conversion efficiency of 7% CdTe / CdS solar cell using the same method.
机译:本发明涉及在由ITO(In 2 O 3 .SnO 2 制成的透明导电玻璃基板上制造CdS薄膜的方法。 >)或SnO 2 :F在特定条件下通过溶液生长法。使CdS薄膜退火,然后对其进行电子束(EB)。通过诸如蒸发,溅射等方法在CdS薄膜上形成CdTe薄膜。然后,对CdTe薄膜进行热处理,用2%至20%的铬酸溶液进行化学蚀刻,然后用水合肼去除氧化膜,沉积Au或Cu / Au,然后进行热处理。本发明涉及一种使用CdS薄膜制造CdTe / CdS太阳能电池的方法。使用相同的方法,CdS薄膜的能量转换效率为7%CdTe / CdS太阳能电池。

著录项

  • 公开/公告号KR970063794A

    专利类型

  • 公开/公告日1997-09-12

    原文格式PDF

  • 申请/专利权人 이승배;

    申请/专利号KR19960004660

  • 申请日1996-02-26

  • 分类号H01L31/04;

  • 国家 KR

  • 入库时间 2022-08-22 03:16:21

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