首页> 外国专利> An active pixel sensor cell for reducing the influence of 1 / f noise, increasing the voltage range of the cell, and reducing the size of the cell

An active pixel sensor cell for reducing the influence of 1 / f noise, increasing the voltage range of the cell, and reducing the size of the cell

机译:有源像素传感器单元,用于减少1 / f噪声的影响,扩大单元的电压范围并减小单元的尺寸

摘要

In the present invention, an active pixel sensor cell includes a buffer transistor having a well region of a second conductivity type formed in a substrate of a first conductivity type, and a gate connected to the well region.;According to the present invention, the active pixel sensor cell also includes a reset region of the first conductivity type formed in the well region. By forming the reset region in the well region, a reset diode is formed which changes the voltage on the well region when connected to the reset voltage pulse.
机译:在本发明中,有源像素传感器单元包括:缓冲晶体管,其具有形成在第一导电类型的基板中的第二导电类型的阱区域;以及栅极,其连接至该阱区域。有源像素传感器单元还包括在阱区中形成的第一导电类型的复位区。通过在阱区中形成复位区,形成了复位二极管,当连接到复位电压脉冲时,该二极管改变阱区上的电压。

著录项

  • 公开/公告号KR970066691A

    专利类型

  • 公开/公告日1997-10-13

    原文格式PDF

  • 申请/专利权人 클라크 3세 존 엠.;

    申请/专利号KR19970006748

  • 发明设计人 메릴 리챠드 빌링즈;

    申请日1997-02-28

  • 分类号G02F1/136;

  • 国家 KR

  • 入库时间 2022-08-22 03:16:20

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