首页> 外国专利> Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell

Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell

机译:有源像素传感器单元,可减少1 / f噪声的影响,增加单元的电压范围并减小单元的尺寸

摘要

The accuracy of an active pixel sensor cell is increased by utilizing a reset diode in lieu of the reset transistor that is conventionally used to reset the voltage on the photodiode of the cell. The reset diode, which is largely unaffected by 1/f noise, consistently resets the photodiode to a substantially constant voltage as opposed to the reset transistor which varies the reset voltage on the photodiode across integration periods due to the effect of 1/f noise. In the present invention, the photodiode is formed by forming a well region of a second conductivity type in a substrate of a first conductivity type. The reset diode is then formed by forming a reset region of the first conductivity type in the well region.
机译:通过使用复位二极管代替通常用于复位单元的光电二极管上的电压的复位晶体管,可以提高有源像素传感器单元的精度。与1 / f噪声的影响不同的是,复位二极管始终将光电二极管复位到基本恒定的电压,而该复位二极管与在整个积​​分周期内改变光电二极管上的复位电压的复位晶体管相反。在本发明中,通过在第一导电类型的基板中形成第二导电类型的阱区域来形成光电二极管。然后通过在阱区中形成第一导电类型的复位区来形成复位二极管。

著录项

  • 公开/公告号US5721425A

    专利类型

  • 公开/公告日1998-02-24

    原文格式PDF

  • 申请/专利权人 NATIONAL SEMICONDUCTOR CORPORATION;

    申请/专利号US19960609553

  • 发明设计人 RICHARD BILLINGS MERRILL;

    申请日1996-03-01

  • 分类号H01L31/062;H01L31/113;

  • 国家 US

  • 入库时间 2022-08-22 02:40:08

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