Carbon Nitride (CNx) Thin Film Forming Apparatus and Method Thereof

摘要

The present invention relates to a graphite target which is composed of a chamber, an exhaust part, a carbon ion (C ^- ) supply part and a nitrogen ion (N ^- ) supply part, A second process of irradiating the carbon ion beam emitted from the first process to the substrate mounted on the inside of the chamber while accelerating the carbon ion beam emitted in the first process, (CN _x ) thin film through a third process of supplying a nitrogen ion beam, which reacts with a carbon ion beam to form a nitride carbon half film on the substrate, to the substrate side, and a method of forming the carbon nitride thin film. , A carbon nitride thin film is formed by reacting a carbon ion beam having a high energy with a nitrogen ion beam so that the hardness, the modulus (force for deforming the unit cell) This force has the effect of a strong carbon nitride films can be jungchak to the substrate in a short time.