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A process for the increase of the deposition rate in a plasma discharge space and plasma chamber.
A process for the increase of the deposition rate in a plasma discharge space and plasma chamber.
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机译:一种用于增加等离子体放电空间和等离子体室中的沉积速率的方法。
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摘要
For increasing the rate with which a workpiece is treated in a plasma enhanced chemical vapor deposition method and thereby lowering for coating treatment exposure of the coating to ion impact, there is maintained a non-vanishing dust particle density along the surface to be treated with a predetermined density distribution along this surface. The density distribution may be controlled by appropriately applying a field of force substantially in parallelism to the surface to be treated and acting on the dust particles entrapped in the plasma discharge.
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