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A process for the increase of the deposition rate in a plasma discharge space and plasma chamber.

机译:一种用于增加等离子体放电空间和等离子体室中的沉积速率的方法。

摘要

For increasing the rate with which a workpiece is treated in a plasma enhanced chemical vapor deposition method and thereby lowering for coating treatment exposure of the coating to ion impact, there is maintained a non-vanishing dust particle density along the surface to be treated with a predetermined density distribution along this surface. The density distribution may be controlled by appropriately applying a field of force substantially in parallelism to the surface to be treated and acting on the dust particles entrapped in the plasma discharge.
机译:为了提高用等离子增强化学气相沉积法处理工件的速率,从而降低涂层的涂层处理能力,使涂层暴露于离子冲击下,沿待处理表面保持不消失的粉尘密度。沿该表面的预定密度分布。可以通过将基本上平行的力场适当地施加到要处理的表面并作用在等离子放电中截留的灰尘颗粒上来控制密度分布。

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