HF circuitry with silicon substrate with specific resistance of more than 100 ohms per cm

摘要

On the insulating layer (3) is deposited a metal intermediate, coupling layer (4). Pref. the specific resistance of the silicon substrate (1) is at least 500 ohms per cm. Typically on the substrate main surface is formed an epitaxial layer (2) to form a circuit element. Between the epitaxial layer and the silicon substrate may be deposited a buffer silicon layer. The silicon substrate may be 50 to 200 micron thick. On the substrate main surface may be deposited a silicon layer with an intermediate buried insulating layer.