Prodn. of bipolar power transistor - by forming n+ layer on one side of semiconductor crystal wafer, bonding wafer to layer, forming p+ region on side of bonded structure, etc.

摘要

Prodn. of bipolar transistor involves: (a) forming a n+ layer (10) on one side of a n- semiconductor crystal wafer (9); (b) bonding a n+ semiconductor crystal wafer (11) to the layer (10); (c) forming a p+ region (13) on the n- side of the bonded structure; and (d) forming n+ regions (14) in the p+ region (13), the n+ regions forming the emitter, the p+ region forming the base and the n+ side of the bonded structure forming the collector of the transistor.