Processing a thin semiconductor wafer comprises heat treating the rear side of the wafer, applying a metal-based bonding covering layer, contacting the rear side substrate with wafer forming conducting side, etc.

摘要

Processing a thin semiconductor wafer (1) having an active front side on which a front side supporting substrate (3) is mounted using a bonding layer (4) comprises: (a) heat treating the rear side of the wafer; (b) applying a metal-based bonding covering layer (7) on the rear side and/or on a rear side substrate (10); (c) contacting the rear side substrate and the wafer forming a conducting metal-based bonding layer (11); (d) removing the front side substrate; and (e) structuring. The metal-based bonding material is selected so that the materials, especially the wafer materials, in the neighboring layers and the metal-based bonding material are practically unmixed. Preferred Features: A thick layer of silver paste or a conducting paste made from silver alloys, other noble metals or noble metal alloys is used as the metal-based bonding material. The rear side of the wafer and/or the contact surface of the rear side substrate is metallized before applying the metal-based bonding covering layer.