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CCD solid state image device which has a semiconductor substrate with a P- type region with an N-type region formed therein by injection of arsenic
CCD solid state image device which has a semiconductor substrate with a P- type region with an N-type region formed therein by injection of arsenic
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机译:CCD固态图像器件,其具有通过注入砷而在其中形成有N型区域的P型区域的半导体基板
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摘要
In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN Junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.
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