首页> 外国专利> Apparatus for achieving mechanical and thermal isolation of portions of integrated monolithic circuits

Apparatus for achieving mechanical and thermal isolation of portions of integrated monolithic circuits

机译:用于实现部分集成单片电路的机械和热隔离的设备

摘要

A preferred embodiment of an integrated semiconductor device includes a semiconductor die having a hole therethrough. A paddle member includes a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the hole. A cap layer is bonded to the semiconductor die to completely cover the hole, the paddle member, and the handle member. The second surface of the semiconductor die is bonded to the lead frame. A preferred embodiment of a method of manufacturing an integrated semiconductor device includes the steps of: forming a semiconductor die having a paddle area for isolating sensitive circuitry and an unoccupied area which substantially surrounds the paddle area except for a handle area, forming a trench in the unoccupied area, covering the paddle area, the trench, and the handle area with a sacrificial spacer material, covering the sacrificial spacer material with a cap layer, etching the semiconductor die beneath the paddle area and the trench until the handle area suspends the paddle area within a hole formed in the semiconductor die, and bonding the second surface of the semiconductor die to a lead frame.
机译:集成半导体器件的优选实施例包括具有穿过其的孔的半导体管芯。桨状构件包括连接在桨状构件和半导体管芯之间的手柄构件,以将桨状构件悬挂在孔中。盖层结合到半导体管芯以完全覆盖孔,桨状构件和手柄构件。半导体管芯的第二表面结合到引线框架。制造集成半导体器件的方法的一个优选实施例包括以下步骤:形成具有用于隔离敏感电路的焊盘区域和除了手柄区域以外基本上围绕该焊盘区域的未占用区域的半导体管芯,在其中形成沟槽。空的区域,用牺牲性间隔物材料覆盖桨状区域,沟槽和手柄区域,用覆盖层覆盖牺牲性间隔物材料,蚀刻桨状区域和沟槽下方的半导体管芯,直到句柄区域悬挂桨状区域在形成在半导体管芯中的孔中,并且将半导体管芯的第二表面结合到引线框架。

著录项

  • 公开/公告号US5583373A

    专利类型

  • 公开/公告日1996-12-10

    原文格式PDF

  • 申请/专利权人 NATIONAL SEMICONDUCTOR CORPORATION;

    申请/专利号US19950541258

  • 发明设计人 ROBERT A. PEASE;JAMES V. BALL;

    申请日1995-10-12

  • 分类号H01L23/02;H01L29/82;H01L23/495;

  • 国家 US

  • 入库时间 2022-08-22 03:10:57

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