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SOI trench DRAM cell for 256 MB DRAM and beyond
SOI trench DRAM cell for 256 MB DRAM and beyond
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机译:SOI沟槽DRAM单元,用于256 MB DRAM及更高
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摘要
A trench SOI structure is described. The structure is useful, for instance in the fabrication of DRAM cells. The structure can be fabricated by extending the conventional substrate plate trench cell. The SOI cell eliminates the parasitic trench sidewall leakage, reduces soft errors, eliminates well to substrate leakage, in addition to all the other advantages of SOI devices.
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