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Dual I/O logic for high voltage CMOS circuit using low voltage CMOS processes

机译:使用低压CMOS工艺的高压CMOS电路的双I / O逻辑

摘要

CMOS transistor logic circuitry is permitted to operate at higher power supply voltages while retaining lower voltage processing geometries by providing each input signal as dual input signals that track each other within two different voltage ranges. A shield voltage is provided approximately midway between the uppermost and lowermost power supply voltages. The first input signal ranges between the lowermost power supply voltage and the shield voltage, and the second input signal ranges between the shield voltage and the uppermost power supply voltage. The first and second input signals drive the gates of n-channel and p- channel CMOS switching transistors, respectively, the drain terminals of which are coupled to first and second output terminals, respectively. N- channel and p-channel shield transistors are connected in series between the first and second output terminals, and have their gate terminals coupled to the shield voltage.
机译:通过将每个输入信号提供为在两个不同电压范围内相互跟踪的双输入信号,CMOS逻辑电路可以在较高的电源电压下运行,同时保持较低的电压处理几何形状。大约在最高和最低电源电压之间的中间位置提供屏蔽电压。第一输入信号的范围在最低电源电压和屏蔽电压之间,第二输入信号的范围在屏蔽电压和最高电源电压之间。第一和第二输入信号分别驱动n沟道和p沟道CMOS开关晶体管的栅极,其漏极端子分别耦合到第一和第二输出端子。 N沟道和p沟道屏蔽晶体管串联连接在第一和第二输出端子之间,并且使其栅极端子耦合到屏蔽电压。

著录项

  • 公开/公告号US5604449A

    专利类型

  • 公开/公告日1997-02-18

    原文格式PDF

  • 申请/专利权人 VIVID SEMICONDUCTOR INC.;

    申请/专利号US19960592920

  • 发明设计人 RICHARD A. ERHART;THOMAS W. CICCONE;

    申请日1996-01-29

  • 分类号H03K19/003;

  • 国家 US

  • 入库时间 2022-08-22 03:10:35

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