Vacuum microelectronic devices with multiple planar electrodes

摘要

A fabrication process for vacuum microelectronic devices having multiple electrode levels includes production of a first-level electrode mask on a substrate. The mask pattern is transferred to the substrate to produce a trench surrounding an emitter which is formed by thermal oxidation. The trench is filled with tungsten to form a gate electrode surrounding the emitter, and the resulting wafer is planarized. A second- level electrode is formed on the top surface of the wafer, and is planarized. Additional levels are similarly produced, and thereafter the electrodes are released.