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Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
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机译:CMP后从晶片上去除金属化合物污染物的化学溶液和晶片清洗方法
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摘要
A process and solution for cleaning Fe contaminants bound to a metallized semiconductor surface after CMP planarization. The solution comprises a PH buffered solution including hydrofluoric acid and a ligand selected from a group consisting of citrates and EDTA.
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