Method of fabricating single crown, extendible to triple crown, stacked capacitor structures, using a self-aligned capacitor node contact

摘要

A process for creating a stacked capacitor, dynamic random access memory device, featuring increased capacitor surface area, resulting from a polysilicon, triple crown shaped, lower electrode structure, and also featuring self-alignment of the stacked capacitor contact structure, to a bit line contact structure, has been developed. The triple crown shaped, lower electrode structure is comprised of polysilicon spacers, formed via use of polysilicon and silicon oxide, low pressure chemical deposition, and anisotropic RIE, procedures.