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Process to manufacture crown stacked capacitor structures with HSG- rugged polysilicon on all sides of the storage node
Process to manufacture crown stacked capacitor structures with HSG- rugged polysilicon on all sides of the storage node
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机译:在存储节点的所有侧面上使用HSG坚固的多晶硅制造冠状堆叠电容器结构的工艺
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摘要
The present invention develops a container capacitor by forming a first insulative layer over conductive word lines; forming an opening between neighboring conductive word lines; forming a conductive plug between neighboring parallel conductive word lines; forming a planarized blanketing second insulating layer over the first insulative layer and the conductive plug; forming an opening into the second insulating layer, the opening thereby forming a container shape; forming a conductive spacer adjacent the wall of the container form, the conductive spacer having inner and outer surfaces; removing the second insulating layer, thereby exposing the outer surface of the conductive spacer; forming a layer of hemispherical grained conductive material superjacent the inner and outer surfaces of the conductive spacer; forming insulating spacers adjacent the inner and outer surfaces of the hemispherical grained conductive material; patterning the hemispherical grained conductive material to form a separate conductive container structure serving as a first capacitor cell plate; removing the insulating spacers; forming a capacitor cell dielectric layer adjacent and coextensive the conductive container structure and the first insulating layer; and forming a second conductive layer superjacent and coextensive the capacitor cell dielectric layer, the second conductive layer forming a second capacitor cell plate. The process of the present invention can be further modified to form a DRAM double container capacitor storage cell.
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