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Method for manufacturing double-crown capacitors self-aligned to node contacts on dynamic random access memory
Method for manufacturing double-crown capacitors self-aligned to node contacts on dynamic random access memory
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机译:与动态随机存取存储器上的节点触点自对准的双冠电容器的制造方法
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摘要
A method is described using a single photoresist mask to make a double- crown-shaped DRAM capacitor self-aligned to the capacitor node contact. After forming the DRAM FETs and the bit lines, a planar BPSG layer, a first polysilicon layer, and a CVD oxide layer are deposited. A node contact photoresist mask is used to form first openings in the CVD oxide in which silicon nitride sidewall spacers are formed. A smaller second opening is etched in the first opening to form node contact openings to the DRAM FET source/drain areas. A conformal second polysilicon layer is deposited to form node contacts in the second openings and over the free- standing sidewall spacers. A planar spin-on glass layer is then used as a self-aligned mask to etch back to expose the second polysilicon layer, which is then removed from the top of the sidewall spacers. After removing the spin-on glass an anisotropic etch is used to form the double- crown-shaped capacitor bottom electrodes self- aligned to the node contacts. The bottom electrode surface is roughened to increase the capacitance area, and the sidewall spacers are removed. An interelectrode dielectric layer and a third polysilicon layer are used to complete the double-crown-shaped stacked capacitors.
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