Method of estimating initial values of potential in semiconductor device simulation

摘要

In order to estimate an initial potential value for semiconductor device simulation at each of iterative procedures a computer system, a plurality of bias conditions are stored in a memory. Following this, one bias condition is retrieved from the memory at a given iterative procedure. Further, an analysis result already obtained in an iterative procedure, which precedes the given iterative procedure, is retrieved from the memory. Subsequently, an initial potential value is estimated which is used in the give iterative procedure by solving a Laplace equation which is weighted by a coefficient including a reciprocal of electric field intensity.