首页> 外国专利> MANUFACTURE OF YIG THIN FILM CHIP FOR MAGNETOSTATIC WAVE ELEMENT

MANUFACTURE OF YIG THIN FILM CHIP FOR MAGNETOSTATIC WAVE ELEMENT

机译:YIG薄膜组件用于静磁波元件的制造

摘要

PROBLEM TO BE SOLVED: To realize low cost by cutting a YIG thin film chip from a wafer which is formed in such a way that a magnetostatic wave element material of specified composition is liquid phase-epitaxial-grown on both surfaces of a garnet substrate, pasting a plurality of these chips one another, and cutting a substrate cross section of each chip at its center in a plane parallel to an epitaxial film surface. ;SOLUTION: A magnetostatic wave element material whose composition is expressed with R3 (FeM)5O12 (R is at least an element of Bi, Y, La, and Gd, M is at least an element of Ga, Al and Sc) is liquid phase-epitaxial-grown on both surfaces of a garnet (GGG) substrate to form a wafer. After a YIG thin film chip for a magnetostatic wave element is cut from it, thin film surfaces of the chips are stuck to one another with wax. Then every chip is cut at the center of GGG substrate 2 of each chip 1 along a cutting line 4 at the same time, with a multi-edge cutter. The wax is melted after cutting, then the chip which has YIG thin film 3 formed on the front and back surfaces of the GGG substrate of each chip is obtained.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:为了通过从晶片切割YIG薄膜芯片来实现低成本,该晶片以在石榴石衬底的两个表面上液相外延生长的特定组成的静磁波元件材料形成,彼此粘贴多个这些芯片,并且在平行于外延膜表面的平面中在其中心处切割每个芯片的基板横截面。 ;解决方案:静磁波元件材料,其成分用R 3 (FeM) 5 O 12 表示(R至少是Bi,Y,La和Gd,M至少是Ga,Al和Sc的元素)在石榴石(GGG)衬底的两个表面上液相外延生长以形成晶圆。从其上切下用于静磁波元件的YIG薄膜芯片后,用蜡将芯片的薄膜表面彼此粘合。然后,利用多刃切割机沿着切割线4同时在每个芯片1的GGG基板2的中心切割每个芯片。切割后使蜡融化,得到在每个芯片的GGG基板的正反两面形成了YIG薄膜3的芯片。版权所有:(C)1998,日本特许厅

著录项

  • 公开/公告号JPH1012439A

    专利类型

  • 公开/公告日1998-01-16

    原文格式PDF

  • 申请/专利权人 SHIN ETSU CHEM CO LTD;

    申请/专利号JP19960165547

  • 发明设计人 RIYUUOU TOSHIHIKO;TANNO MASAYUKI;

    申请日1996-06-26

  • 分类号H01F10/24;H01F41/28;

  • 国家 JP

  • 入库时间 2022-08-22 03:08:06

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