首页> 外国专利> ANODIC CHEMICAL CONVERSION TREATMENT OF FILM SUBSTRATE AND SEMICONDUCTOR THIN-FILM HAVING PHOTOLUMINESCENCE CHARACTERISTIC

ANODIC CHEMICAL CONVERSION TREATMENT OF FILM SUBSTRATE AND SEMICONDUCTOR THIN-FILM HAVING PHOTOLUMINESCENCE CHARACTERISTIC

机译:具有光致发光特性的薄膜基质和半导体薄膜的阳极化学转化处理

摘要

PROBLEM TO BE SOLVED: To obtain a functional element such as a light-emitting element, a cold cathode source, and a solar cell thin-film, etc., having stable characteristics by terminating the substrate surface with heavy hydrogen. ;SOLUTION: A thin-film substrate is immersed as an anode in the heavy hydrogen fluoride (DF) solution, and a thin-film substrate is made porous. As the thin-film substrate, a single-crystal Si, a single-crystal Ge, diamond, SiC, poly Si, a micro-crystal Si, amorphous Si, etc., are used. The heavy hydrogen fluoride (DF) solution, preferably has the composition of DF:H2O=1:(10-200). Thus, the thin-film substrate treated with the heavy hydrogen fluoride (DF) solution has a porous structure, wherein the hole part wall is terminated with heavy hydrogen (D) and exhibits a stable photoluminescence characteristic.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:通过用重氢封端基板表面来获得具有稳定特性的功能元件,例如发光元件,冷阴极源和太阳能电池薄膜等。 ;解决方案:将薄膜基板作为阳极浸入重质氟化氢(DF)溶液中,并使薄膜基板多孔。作为薄膜基板,使用单晶硅,单晶Ge,金刚石,SiC,多晶硅,微晶硅,非晶硅等。重氟化氢(DF)溶液优选具有DF:H 2 O = 1:(10-200)的组成。因此,用重氟化氢(DF)溶液处理的薄膜基板具有多孔结构,其中孔部分的壁被重氢(D)终止,并显示出稳定的光致发光特性。;版权所有:(C)1998,日本特许厅

著录项

  • 公开/公告号JPH10256225A

    专利类型

  • 公开/公告日1998-09-25

    原文格式PDF

  • 申请/专利权人 KAGAKU GIJUTSU SHINKO JIGYODAN;

    申请/专利号JP19970052903

  • 发明设计人 KOSHIDA NOBUYOSHI;MATSUMOTO TAKAHIRO;

    申请日1997-03-07

  • 分类号H01L21/3063;H01L31/04;H01L33/00;

  • 国家 JP

  • 入库时间 2022-08-22 03:07:52

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