METHOD OF DESIGNING RESIST USED FOR HALF TONE PHASE SHIFT METHOD, POSITIVE RESIST USED FOR HALF TONE PHASE SHIFT METHOD, AND MANUFACTURE OF SEMICONDUCTOR DEVICE USING THIS RESIST

摘要

PROBLEM TO BE SOLVED: To dispense with the reduction of half tone transmissivity or the application of a mask bias and prevent film reduction without requiring the reduction of half tone transmissivity or the application of a mask bias by forming a resist so that the ratio of the exposure when a substantially square hole pattern is formed to the exposure when the resist residual film is zero is in a specified range. SOLUTION: A resist used for half tone phase shift method is formed so that the ratio Eop/Eth of the exposure Eop when a substantially square hole pattern having a dimension R is formed without a mask bias by use of half tone phase shift method to the exposure Eth when the resist residual film is zero is more than 2 and less than 6. R is the critical resolution dimension of pattern in a general exposure. The general exposure means an exposing method of equally magnifying or properly contracting a pattern on a mask without using phase shift to expose it on a material to be exposed.