METHOD AND SYSTEM FOR DRY ETCHING OF HALF-TONE PHASE SHIFTED FILM, HALF-TONE PHASE SHIFTED PHOTOMASK AND MANUFACTURE THEREOF, AND SEMICONDUCTOR CIRCUIT AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce dimensional differences due to inconsistencies in pattern density in a plane by using a mixed gas, wherein a reducing gas is added to a reactive ion etching gas consisting of an oxygen-containing gas and a halogen- containing gas as a reactive etching gas. ;SOLUTION: A dry etching system (MERIE system) allows dry etching to a chromic half-tone phase shift film. At this time, a mixed gas wherein a gas containing at least hydrogen, such as H2, and HCl gas, is added to a halogen- containing gas such as Cl2+O2 is used. This enables dimensional control with in a plane which is equal to that of a mask wherein patterns are formed in generally uniform density in a plane, namely, which can extremely reduce dimensional differences in the design dimension of one to two μm wide, even in a chromic half-tone phase shift photomask, wherein film and rough patterns coexist within a plane.;COPYRIGHT: (C)2000,JPO