首页> 外国专利> INTEGRATED CIRCUIT PROCESS YIELD ENHANCING TECHNIQUE FOR REDUCING UNDESIRED WATER CONTENT HOLDING OF DIELECTRIC AND HYDROGEN DISCHARGE DIFFUSION INFLUENCE

INTEGRATED CIRCUIT PROCESS YIELD ENHANCING TECHNIQUE FOR REDUCING UNDESIRED WATER CONTENT HOLDING OF DIELECTRIC AND HYDROGEN DISCHARGE DIFFUSION INFLUENCE

机译:用于减少介电和氢排放扩散影响的不需要的水含量保持的集成电路工艺增强技术

摘要

PROBLEM TO BE SOLVED: To reduce harmful influence of water content contaminants by passivating an integrated circuit involving a first and second layers to partly absorb contaminants existing on the second layer by the first layer. SOLUTION: An integrated circuit 10 has one element partly surrounded by a first layer, say inter-layer dielectric layer 30 having a relatively high contaminant absorption. This layer 30 is annealed to partly remove water contained therein. A second layer, say, an inter-layer ferroelectric glass layer 34 having a relatively low contaminant absorption is laminated adjacent the dielectric layer 30. On dielectric layer 30 and a ferroelectric glass layer 34, a passivation layer 66 is overlaid to partly absorb any of contaminants existing on the glass layer 34 by the dielectric layer 30.
机译:要解决的问题:通过钝化包括第一和第二层的集成电路以部分地吸收第一层在第二层上存在的污染物,来减少水分含量污染物的有害影响。解决方案:集成电路10的一个元件部分被第一层包围,例如层间电介质层30具有相对较高的污染物吸收率。对该层30进行退火以部分去除其中包含的水。在电介质层30附近层压第二层,即具有相对低的污染物吸收的层间铁电玻璃层34。在电介质层30和铁电玻璃层34上,覆盖钝化层66以部分吸收任何一种。电介质层30存在于玻璃层34上的污染物。

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