APPARATUS AND METHOD FOR IMPROVING GAP FILLING POWER FOR FSG FILM AND FILM STABILITY

摘要

PROBLEM TO BE SOLVED: To reduce an out-gas in a stage to improve the stability of a film by generating a plasma from a process gas and depositing an Fdoped silicon oxide layer on a substrate in a process chamber. ;SOLUTION: A substrate positioning subroutine 80 carries a substrate on a susceptor 12 and, as desired, brings the substrate up to desired height in a chamber 15 to control the space between the substrate and gas spray manifold 11. A processor 34 controls a plasma generating system, using a readable program from a memory 38, thereby depositing an F-doped silicon oxide layer on the substrate in the chamber 15. This reduces the out-gas in a stage to improve the film stability.;COPYRIGHT: (C)1998,JPO