Novel method to increase fluorine stability to improve gap fill ability and reduce k value of fluorine silicate glass (FSG) film

摘要

A method of forming an FSG film comprising the following steps. A structure is provided. An FSG film is formed over the structure by an HDP-CVD process under the following conditions: no Argon (Ar)—side sputter; SiF₄ flow: from about 53 to 63 sccm; an N₂ flow: from about 25 to 35 sccm; and an RF power to provide a uniform plasma density.