METHOD FOR FORMING GALLIUM ARSENIDE COMPOUND SEMICONDUCTOR ON III-COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To properly form a GaAs layer on a GaN layer. ;SOLUTION: A buffer layer 2, made of AlN is formed on a sapphire substrate 1 by the organic metal vapor growth method (MOVPE), and H₂ a carrier gas, ammonium (NH₃), and trimethylgallium (TMAG) are introduced by a specific amount each, thus forming a first semiconductor layer 3 made of GaN on the buffer layer 2. Then, the supply of H₂ is stopped, then N₂ a carrier gas, TMG (trimethylgallium), and arsine (AsH₃) are introduced by a specific amount each by the MOVPE (organic metal compound vapor growth method). At the same time, NH₃ is supplied only for the initial period when the second semiconductor layer 4 is formed, and a second semiconductor layer 4 made of GaAs is formed on the first semiconductor layer 3. As a result, since N₂ is used as a carrier gas when the second semiconductor layer 4 is formed, the first semiconductor layer 3 will not be damaged, and a second semiconductor layer 4 is formed properly on the first semiconductor layer 3.;COPYRIGHT: (C)1998,JPO