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Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
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机译:通过结合干燥和退火在砷化镓基化合物半导体上形成稳定的天然氧化物的方法
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摘要
A method of forming a highly stable oxide on gallium arsenide containing compound semiconductors. A native oxide is grown on the surface of the semiconductor and dried during a suitable baking cycle. The oxide is then annealed at a temperature which is significantly higher than that of the baking cycle. This annealing step densifies the oxide and renders it particularly stable and impervious to impurities. In a particular embodiment, a diffusion mask is formed in accordance with the invention to permit selective area diffusion of impurities into a gallium arsenide containing compound semiconductor.
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