首页> 外国专利> EVANESCENT WAVE DETECTING MICROPROBE AND MANUFACTURE THEREFOR, PROBE HAVING THIS MICROPROBE AND MANUFACTURE THEREFOR, EVANESCENT WAVE DETECTING DEVICE HAVING THIS MICROPROBE, NEAR FIELD OPTICAL SCANNING MICROSCOPE AND INFORMATION REPRODUCING DEVICE

EVANESCENT WAVE DETECTING MICROPROBE AND MANUFACTURE THEREFOR, PROBE HAVING THIS MICROPROBE AND MANUFACTURE THEREFOR, EVANESCENT WAVE DETECTING DEVICE HAVING THIS MICROPROBE, NEAR FIELD OPTICAL SCANNING MICROSCOPE AND INFORMATION REPRODUCING DEVICE

机译:隐波检测微探针和制造该探针的探针,并制造该隐探针,并制造隐窝检测装置,具有该微探针的探针,近场光学扫描显微镜和信息再现设备

摘要

PROBLEM TO BE SOLVED: To provide a microprobe by which the SN ratio and resolution can be improved and a uniform shape excellent in reproducibility can be obtained by forming a photoconductive material layer on a separative layer of a first substrate, and transferring this layer to a joining layer on a second substrate. ;SOLUTION: First of all, crystal axis anisotropic etching is performed on a first substrate 1 of monocrystal silicon, and after an inverse pyramid-shaped recessed part 3 is formed, a separative layer 4 is formed on an upper surface of the substrate 1. Next, a photoconductive film 5 of amorphous silicon is formed, and is etched, and a photoconductive material layer 7 is formed. Next, electrodes 10 and 11 are formed on a second base board 12 of Pyrex glass, and these are brought into contact with a surface of the substrate 1, and are heated, and are press-fitted. Then, since an alloy layer is formed and joined on an interface between the material layer 7 and the electrodes 10 and 11, the substrate 1 is torn off by the sensitive layer 4, and a pyramid-shaped microprobe 20 is formed. Therefore, the microprobe excellent in the SN ratio and resolution is obtained, and a system-simplified evanescent wave detecting device and a near field optical scanning microscope or the like can be constituted by using this.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:提供一种微探针,通过其在第一基板的隔离层上形成光电导材料层并将该层转印到硅片上,从而可以提高信噪比和分辨率,并获得可再现性优异的均匀形状。第二基板上的接合层。 ;解决方案:首先,在单晶硅的第一基板1上进行晶轴各向异性蚀刻,并且在形成倒金字塔形的凹入部分3之后,在基板1的上表面上形成隔离层4。接下来,形成非晶硅的光电导膜5,并且对其进行蚀刻,并且形成光电导材料层7。接着,在派热克斯玻璃的第二基板12上形成电极10、11,使它们与基板1的表面接触,并进行加热,压入。然后,由于在材料层7与电极10和11之间的界面上形成并结合了合金层,所以基板1被敏感层4撕下,并且形成了金字塔形的微探针20。因此,获得了SN比和分辨率优异的微探针,并且通过使用它可以构成系统简化的e逝波检测装置和近场光学扫描显微镜等。; COPYRIGHT:(C)1998,JPO

著录项

  • 公开/公告号JPH10197542A

    专利类型

  • 公开/公告日1998-07-31

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP19970015823

  • 发明设计人 YAGI TAKAYUKI;

    申请日1997-01-13

  • 分类号G01N37/00;G01B11/30;G11B7/135;

  • 国家 JP

  • 入库时间 2022-08-22 03:05:23

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