METHOD OF FORMING CVD FILM AND HOT-WALL SINGLE WAFER PROCESSING LOW-PRESSURE CVD APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method of forming CVD film and apparatus for forming CVD film, improved to avoid producing particles, without lowering the throughput. ;SOLUTION: This low-pressure CVD apparatus 10 comprises two reactor chambers 12A, B, load lock chambers 18A, B housing cassettes 16 as a front and back chambers of the reactor chambers 12, tweezers 20 and carrier chamber 22 for carrying wafers in spaces between load lock chambers 18A, B and reactor chambers 12. The load lock chambers 18A, B have heaters 29 for heating the wafers up to a film-forming temp. during evacuating of the chambers and heaters 28 disposed on the tops, sides and bottoms of the reaction chambers 12 and carrier chamber 22 for keeping the wafers at the film-forming temp.;COPYRIGHT: (C)1998,JPO