FORMATION OF LOW PRESSURE CHEMICAL VAPOR DEPOSITED TANTALUM OXIDE FILM WITH FEW LEAKAGE CURRENT

摘要

PROBLEM TO BE SOLVED: To manufacture, in a low pressure environment, a capacitor dielectric body of a semiconductor memory device which has less leakage current. SOLUTION: First a semiconductor silicon substrate 10 having an electrode layer 11 made of NH3 -polysilicon nitride is made. Next, a tantalum oxide (Ta2 O5 ) film 12 is deposited all over the electrode layer 11. Then, the deposited tantalum oxide film is annealed at 800 deg.C for 30 minutes in a nitrogen gas (N2 O) atmosphere. By this post-deposition annealing method, a very reliable tantalum oxide film having less leakage current for a semiconductor memory device can be manufactured.