ANODICALLY CHEMICAL CONVERSION METHOD FOR SURFACE OF INGOT, THIN COATING SEMICONDUCTOR USING THE SAME, PRODUCTION OF THIN COATING SOLAR BATTERY AND ANODICALLY CHEMICAL CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To easily and surely produce a thin coating semiconductor excellent in crystallinity at a low cost by subjecting the surface of a semiconductor ingot to anodically chemical convertion and forming a porous layer. ;SOLUTION: A semiconductor crystal ingot 11 is immersed in an electrolytic soln. 1, the space between ingot 11 and an electrode 3 arranged in the electrolytic soln. 1 is energized, and the circumferential face of the ingot is subjected to anodically chemical convertion. In this way, the surface opposite to the side of the electrode 3 of the ingot 11 is eroded and is formed into the porous one. In this way, the porous layer is formed on the outer circumferential face of the ingot 11. Since the porous layer as the above has the crystallinity of the semiconductor crystal ingot except for the part in which the fine pores are formed, as the semiconductor coating grown thereon, the one excellent in crystallinity can be obtd. Thus, by using this semiconductor coating excellent in crystallinity, e.g. for a solar battery, the solar battery having high conversion efficiency combined with the fact of being formed into thin coating can be constituted.;COPYRIGHT: (C)1998,JPO