首页>
外国专利>
MEMORY REPAIR METHOD, AND ELECTRON BEAM MEMORY REPAIR DEVICE WHERE THE MEMORY REPAIR METHOD IS APPLICABLE, AND MEMORY REDUNDANT CIRCUIT
MEMORY REPAIR METHOD, AND ELECTRON BEAM MEMORY REPAIR DEVICE WHERE THE MEMORY REPAIR METHOD IS APPLICABLE, AND MEMORY REDUNDANT CIRCUIT
展开▼
机译:内存修复方法以及适用于内存修复方法和内存冗余电路的电子束内存修复设备
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To provide a memory repair method where the interval between fuses can be made about 2μm or under and besides which does not damage the layer under the fuses. ;SOLUTION: This device is equipped with a fuse within a semiconductor memory chip and a redundant cell capable of switching to a normal cell by the cut off of this fuse, and in case that there is a blank in the normal memory cells, it is switched to a redundant cell by cutting off the fuse corresponding to the normal memory cell. At this time, a pattern in a specified form is made by applying resist all over the surface of the chip, and exposing and developing the section of the fuse corresponding to the blank normal memory cell. The fuse is cut by etching, using this resist pattern 51 as a mask.;COPYRIGHT: (C)1997,JPO
展开▼