Memory repair manner and that memory repair manner are applied the electron-beam addressed memory repair device and the memory redundant circuit

摘要

PROBLEM TO BE SOLVED: To provide a memory repair method where the interval between fuses can be made about 2μm or under and besides which does not damage the layer under the fuses. ;SOLUTION: This device is equipped with a fuse within a semiconductor memory chip and a redundant cell capable of switching to a normal cell by the cut off of this fuse, and in case that there is a blank in the normal memory cells, it is switched to a redundant cell by cutting off the fuse corresponding to the normal memory cell. At this time, a pattern in a specified form is made by applying resist all over the surface of the chip, and exposing and developing the section of the fuse corresponding to the blank normal memory cell. The fuse is cut by etching, using this resist pattern 51 as a mask.;COPYRIGHT: (C)1997,JPO