GROWTH OF FERRODIELECTRIC FILM OF PB PEROVSKITE TYPE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method for allowing a ferrodielectric film of Pb perovskite type structure to grow, enabling to produce the oriented film of the ferrodielectric film of Pb perovskite type structure free from compositional abnormality by a general MOCVD method. ;SOLUTION: This method for allowing a ferrodielectric film of Pb perovskite type structure to grow comprises guiding the vapors of organic metal raw materials containing at least Pb to the Pt surface of a substrate having the Pt surface in a surface direction (100) at a prescribed film-forming speed of 10-200nm/hr, preferably ≤170nm/hr, and at a substrate temperature of ≤550°C, preferably 500°C, in an oxidizing gas atmosphere, and simultaneously subjecting the thin film of Pb perovskite type structure to its chemical gas phase growth on the Pt surface. Thereby, the ferrodielectric film of Pb perovskite type structure high in the orientation degree can be allowed to grow by the use of a general MOCVD device.;COPYRIGHT: (C)1998,JPO