METHOD FOR FORMING Pb-BASE PEROVSKITE TYPE METAL OXIDE THIN FILM AND Pb-BASE PEROVSKITE TYPE METAL OXIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To crystallize a metal oxide at a low temperature of ≤450°C in a method for forming a Pb-base perovskite type metal oxide thin film by applying a raw material solution for forming the metal oxide thin film on a substrate, then heating the substrate to crystallize the metal oxide. ;SOLUTION: This method for forming the Pb-base perovskite type metal oxide thin film has a stage for applying the raw material for forming the Pb-Ti- base metal oxide thin film on the substrate, then applying a raw material solution for forming the Pb-Zr-Ti-base metal oxide thin film. In the method, a crystallization stage is executed at least one time in such a manner that the thickness of the metal oxide thin film formed by one time of the crystallization stage attains ≤30 nm in the film thickness after the crystallization.;COPYRIGHT: (C)2001,JPO