Microwave excited plasma central processing unit

摘要

PROBLEM TO BE SOLVED: To provide a microwave excited plasma treating device which is capable of uniformly working a member to be treated at a high speed with low damage without the arrangement of a diffusion plate and prevents the occurrence of contamination by the metals and particles occurring in the irradiation of the diffusion plate with ions. SOLUTION: This device includes a vacuum chamber 1 which has a plasma forming chamber 2 in the upper apart and a treating chamber 3 formed below the plasma forming chamber and arranged with the member to be treated, plural gas supplying pipes for supplying treating gases to the inside of the plasma forming chamber, a dielectric window 8 which is arranged in the opening of the upper wall part of the chamber and a rectangular waveguide 10 which is arranged in the upper wall part of the chamber including the dielectric window. Shielding parts 12 for blowing out the gases from the respective supplying pipes toward the rear surface of the dielectric window are respectively arranged on the inside surface of the chambers near the outlet part of the respective gas supplying pipes.