PURPOSE:To form an abrupt hetero boundary by forming a first compound semiconductor epitaxial layer on a board in a first vapor growing chamber, then transferring the board into a second vapor growing chamber, and forming a second compound semiconductor epitaxial layer on the first layer. CONSTITUTION:H2 gas of carrier gas is introduced from a carrier gas inlet tube 16 into a connecting chamber 9, and first material gas of InP is introduced from a material gas inlet tube 17 into a first vapor growing chamber 6. Second material gas of InGaAs is introduced from a material gas inlet tube 18 into a second vapor growing chamber 5. When a board 3 is introduced into the chamber 6, an InP epitaxial crystal is grown on the board 3. Then, a supporting rod 24 is drawn in a direction of an arrow A, and the board 3 is drawn into the chamber 9. The rod 24 is rotated at 180 deg. in a direction of an arrow R, and pulled down in a direction of an arrow B. Then, the board 3 is introduced into the chamber 5, and an InGaAs epitaxial crystal is grown on the InP epitaxial crystal.
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