Insulated gold or gold alloy extra fine wire for semiconductor element bonding

摘要

PURPOSE:To reduce an occurrence of a trouble due to electrical short-circuit and the like by forming an insulation cover layer of a specific thickness on the surface of a gold or a gold alloy extra fine wire and a lubrication layer of a specific thickness on the aforesaid insulation cover layer. CONSTITUTION:An insulation covered or alloy extra fine wire 3 is bonded to a silicon chip 8 on a lead frame 7 via the formation of a ball bonding part 9 and then the wire is paid out while a capillary 4 is being moved toward an electrode 5. Furthermore, the wire is extruded to the electrode 5 with the capillary 4, thereby forming a wedge bond part 6 for wire con nection to the electrode 5. In this case, the thickness of an insulation cover layer 2 is 0.5 to 1.5Xm and the thickness of an lubrication layer 1 is 0.05 to 1.0mum, thereby keeping breakdown voltage at the predetermined voltage and eliminating a trouble for wire connection due to the small exposure of a new surface area at the junction interface of a wedge point.