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Method and device for electron beam irradiation of lif monocrystals in order to manufacture passive laser switches with f2 colour centres.
Method and device for electron beam irradiation of lif monocrystals in order to manufacture passive laser switches with f2 colour centres.
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机译:用于制造lif单晶电子束的方法和装置,以制造具有f2色心的无源激光开关。
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摘要
The invention refers to a method and device for electron beam irradiation of LiF monocrystals in order to manufacture passive laser switches with F2 colour centres, which ensures the uniform irradiation of LiF monocrystals at a 20...30 Mrad/h output of the irradiation dose. At the 1.064 μm wavelength, after irradiation doses of 70...80 Mrad, the absorption factors reach 0.4...0.45 cm-1. The crystals are prevented from overheating by cooling the air-tight sheath, into which the LiF monocrystals are introduced, with a thermostat-controlled water current at a temperature of 10...15 degrees C. The irradiation time is 2...3 hours.
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