METHOD FOR MINIMIZING THE HOT CARRIER EFFECT IN N-MOSFET DEVICES

摘要

An N-Channel Metal Oxide Semiconductor Field EffectTransistor (N-MOSFET) with minimum susceptibility to the HotCarrier Effect (HCE) and a method by which the N-MOSFET isfabricated. Formed upon a semiconductor substrate is a N-MOSFETstructure comprising a gate oxide upon a semiconductor substrate,a gate electrode upon the gate oxide and a pair of N+ source/drainelectrodes adjoining the gate electrode and the gate oxide.Implanted into the gate oxide regions beneath the gate electrodeedges is a dose of a hardening ion. The hardening ion may beeither nitrogen ion or fluorine ion. The hardening ion isimplanted at an angle non-orthogonal to the plane of thesemiconductor substrate through means of a large tilt angle ionimplant process. Optionally, a Lightly Doped Drain (LDD)source/drain electrode structure or Double Doped Drain (DDD)source/drain electrode structure may be incorporated into the N-MOSFET structure.