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OPTOELECTRONIC MATERIAL, DEVICE USING THE SAME AND METHOD FOR MANUFACTURING OPTOELECTRONIC MATERIAL

机译:光电材料,使用该器件的装置和制造光电材料的方法

摘要

This invention relates an op toelectronicmaterial comprising a uniform medium with acontrollable electric characteristic; and semiconductorultrafine particles dispersed in the medium and having amean particle size of 100 nm or less, and an applicationdevice using the same. This invention also relates to amethod of manufacturing an optoelectronic material byirradiating a laser beam onto a first target of asemiconductor material, placed in a reaction chamber inlow pressure rare gas ambient, and a second target of amedium material with a controllable electriccharacteristic, placed in the reaction chamber,condensing/growing a semiconductor material ablatedfrom the first target to be collected as ultrafine particleshaving a mean particle size of 100 nm or smaller on asubstrate placed in the reaction chamber, andcondensing/growing a medium material ablated from thesecond target to be collected on the substrate placed inthe reaction chamber, thus forming an ultrafine-particlesdispersed layer having semiconductor ultrafine particlesdispersed in the medium on the substrate.
机译:光电技术领域包含均匀介质的材料可控的电气特性;和半导体超细颗粒分散在介质中并具有平均粒径为100 nm或更小,及其应用设备使用相同的。本发明还涉及一种通过以下方法制造光电子材料的方法将激光束照射到目标的第一目标上半导体材料,放置在反应室中低压稀有气体环境,以及第二个目标电气可控的中等材料放置在反应室中冷凝/生长烧蚀的半导体材料从第一个目标收集为超细颗粒平均粒径在100 nm或更小将基板放置在反应室中,以及冷凝/生长从将要收集的第二靶材放置在反应室中,从而形成超细颗粒具有半导体超细颗粒的分散层分散在基质上的介质中。

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