HIGHLY POLISHABLE, HIGHLY THERMALLY CONDUCTIVE SILICON CARBIDE, METHOD OF PREPARATION, AND APPLICATIONS THEREOF

摘要

Silicon carbide is produced by chemical vapor deposition attemperatures from 1340-1380°C, deposition chamber pressures of180-200 torr, H2/methyltrichlorosilane ratio of 4-10 anddeposition rate of 1-2 µm/min. Furthermore, H2 supplied as apart of the gas stream contains less than about 1 part permillion (ppm) O2 gas, and various means are provided to excludeparticulate material from the deposition chamber. The siliconcarbide is polishable to 5 .ANG. RMS as measured on a Talystepmechanical profiler and has a thermal conductivity of at leastabout 300 W/mk. The silicon carbide is particularly suitable forapplications where high polishability and thermal conductivity isdesired, such as hard disc drives and read/write heads ofhead-disc assemblies, and also optical apparatus which require a veryhigh polish.