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Integrated emitter drain bypass capacitor for microwave/rf power device applications
Integrated emitter drain bypass capacitor for microwave/rf power device applications
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机译:集成的发射极漏极旁路电容器,适用于微波/射频功率器件应用
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摘要
An integrated power bipolar transistor circuit for microwave/RF applications is disclosed. A "thermal run-away" problem is avoided by providing the transistor with two emitter contacts (E1 and E2). E1 and E2 are respectively connected to a bypass capacitor and a ballast resistor in a parallel configuration. According to the invention the bypass capacitor is integrated on a silicon pedestal of a heterolithic microwave integrated circuit (HMIC) glass substrate. Connection of the bypass capacitor with the bipolar transistor emitter contacts is made using a flip-chip technique. This results in a flip-chip HMIC bipolar power transistor circuit having improved thermal stability and gain.
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