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Hemispherical-grained silicon top-gate electrode for improved soft-error immunity in SRAMs
Hemispherical-grained silicon top-gate electrode for improved soft-error immunity in SRAMs
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机译:半球形硅顶栅电极可改善SRAM中的抗软错误性
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摘要
An SRAM cell having improved soft error immunity connects each of the storage nodes of the SRAM cell to an overlying electrode having a textured surface which is separated from a constant potential plate electrode by a dielectric layer. The textured surface of the overlying electrode may be created by forming hemispherical-grained silicon on its surface, or by forming a fin structure on its surface. The textured surface of the overlying electrode provides increased capacitance between the overlying electrode and the constant potential plate electrode, thereby increasing the capacitance of the storage node.
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