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Semiconductor optical device with active layer of quantum well structure, use method thereof, light source apparatus including the same, and optical communication system using the same

机译:具有量子阱结构的有源层的半导体光学器件,其使用方法,包括该光学器件的光源装置以及使用该光学装置的光通信系统

摘要

An optical semiconductor device includes a substrate and an active region formed on the substrate. The active region includes a plurality of quantum well layers containing at least one tensile-strained well layer, and the plurality of quantum well layers include a plurality of quantum well layers whose band gaps are different from each other. Such an active region makes it possible to expand a wavelength range over which TE-mode and TM-mode gains balance with each other or are approximately equal to each other.
机译:光半导体装置包括基板和形成在该基板上的有源区。有源区包括包含至少一个拉伸应变阱层的多个量子阱层,并且多个量子阱层包括带隙彼此不同的多个量子阱层。这样的有源区域使得可以扩展波长范围,在该波长范围上TE模式和TM模式增益彼此平衡或近似彼此相等。

著录项

  • 公开/公告号EP0834972A2

    专利类型

  • 公开/公告日1998-04-08

    原文格式PDF

  • 申请/专利权人 CANON KABUSHIKI KAISHA;

    申请/专利号EP19970117234

  • 发明设计人 SEIICHI MIYAZAWA;

    申请日1997-10-06

  • 分类号H01S3/19;H01S3/103;

  • 国家 EP

  • 入库时间 2022-08-22 02:49:34

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