Transmission electron microscopy (TEM) analysis Sample preparation method

摘要

The present invention relates to a transmission electron microscope (SEM) analysis method, which is improved to prevent charge filling occurring during polishing and analysis of an ion beam by depositing a conductive material before a focused ion beam polishing to prepare a sample for analyzing defects generated in a specific area of a semiconductor product will be.;The present invention relates to a transmission electron microscope (SEM) analysis method in which a sample cut and ground to a predetermined size is adhered to a grid, and the measurement points of the sample are polished to a charge-permeable thickness using a focused ion beam In the method, after the conductive material is formed on the surface of the analytical sample, the polishing process is performed.;Therefore, according to the present invention, it is possible to perform accurate TEM analysis on defects of all semiconductor products including an insulating layer, and as a result, productivity of semiconductor products can be improved and filling in FIB polishing is prevented. It is easy to produce a sample.