Abrasive cloths for use in chemical mechanical polishing devices and their chemical mechanical polishing devices

摘要

The present invention is to provide a CMP apparatus for minimizing the deterioration of polishing performance to facilitate the detection of usable operational limits. The CMP apparatus for polishing a semiconductor substrate is provided with a dresser for removing abrasive grains falling on the polishing cloth. Particle removers are provided for easy removal of abrasive grains almost simultaneously or simultaneously with the dressing process. The polishing cloth includes a usage indicator that is formed in the recess. By the exposure of the service limit indicator, the service limit of the polishing cloth can be easily detected.