High Thermal Conductivity Silicon Nitride Structural Member, Semiconductor Package, Heater, Thermal Head

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high thermal conductivity silicon nitride structural member, a semiconductor package, a heater, and a thermal head, wherein 1.0 to 7.5% by weight of rare earth elements are converted into oxides, and Li, Na, K, Fe, Ca, Mg, Sr as impurity cation elements. , Ba, Mn, B in total, 0.3 wt% or less, the thermal conductivity is 60W / (mK) or more, preferably 80W / (mK), and composed of silicon nitride particles and particle system, Is a high thermal conductivity silicon nitride sintered body having a volume ratio of 20% or more, preferably 50% or more, and a thermal conductivity of 60 W (m · K) or more, preferably 80 W (m · K) or more with respect to the whole particle-based phase. In addition, the semiconductor package of the present invention comprises a ceramic substrate on which the semiconductor chip is mounted, a lead frame bonded to the mounting surface side of the semiconductor chip of the ceramic substrate, and a bonded wire electrically connecting the semiconductor chip and the lead frame,Based ceramic substrate is characterized in that formed in the high thermal conductive silicon nitride sintered body.